? silikron semiconductor corporation 2010.3.15 version: 2.1 page 1of5 SSF1030D absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 45 a i d @t c =100 ? c continuous drain current,vgs@10v 35 i dm pulsed drain current 180 p d @t c =25 ? c power dissipation 84 w linear derating factor 1.5 w/ ? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 168 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range ?55 to +1 75 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 1.78 ? ? c/w r ja junction-to-ambient ? ? 62 electrical characteristics @tj=25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ?23 25 m ? v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 3.1 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance - 50 ? s v ds =5v,i d =30a i dss drain-to-source leakage current ?? 1 a v ds =100v,v gs =0v ?? 10 v ds =100v, v gs =0v,t j =150 ? c SSF1030D top view (dpak) id =45a bv=100v rdson=23m ? typ. feathers: ? advanced trench process technology ? ultra low rdson, typical 23mohm ? high avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSF1030D is a new generation of middle voltage and high current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. SSF1030D is assembled in high reliability and qualified assembly house. application: ? power switching application
? silikron semiconductor corporation 2010.3.15 version: 2.1 page 2of5 SSF1030D i gss gate-to-source forward leakage ? ? 100 na v gs =20v gate-to-source reverse leakage ? ? -100 v gs =-20v q g total gate charge ?4.2 ? nc i d =30a v dd =30v v gs =10v q gs gate-to-source charge ?15 ? q gd gate-to-drain("miller") charge ? 14.6 ? t d(on) turn-on delay time ? 14.2 ? ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v t r rise time ?40 ? t d(off) turn-off delay time ?7.3 ? t f fall time ? 14.8 ? c iss input capacitance ? 190 ? pf v gs =0v v ds =25v f=1.0mhz c oss output capacitance ? 135 ? c rss reverse transfer capacitance ?4.2 ? source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) ? ? 45 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current . (body diode) ? ? 180 v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =30a,v gs =0v t rr reverse recovery time 57 ? ns t j =25 ? c,i f =30a di/dt=100a/ s q rr reverse recovery charge 107 ? nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, id = 33.5a, vdd = 50v pulse width 300 s, duty cycle 1.5% ; rg = 25 ? ?? starting tj = 25c gate charge test circuit eas test circuit
? silikron semiconductor corporation 2010.3.15 version: 2.1 page 3of5 SSF1030D switch time test circuit switch waveforms: transfer characteristic capacitance: on resistance vs. junction temperature breakdown voltage vs. junction temperature
? silikron semiconductor corporation 2010.3.15 version: 2.1 page 4of5 SSF1030D gate charge source-drain diode forward voltage safe operation area max drain current vs. junction temperature transient thermal impedance curve
? silikron semiconductor corporation 2010.3.15 version: 2.1 page 5of5 SSF1030D dpak mechanical data:
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